Samsung Semiconductor has developed what it claims is the industry's first high density 512M-bit DDR-II SDRAM (Double Data Rate version 2 Synchronous Dynamic RAM). The company hopes DDR-II will become the next mainstream DRAM technology for high-speed systems, it said Tuesday.
The new device works at 1.8 volts and offers data transfer rates of 533M bps (bits per second) that can be extended to 667M bps for networks and special system environments, Samsung said in a statement.
The 512M bit DDR-II SDRAM meets standards set by JEDEC (Joint Electron Device Engineering Council) for DDR-II in March this year, Samsung said.
Volume production of the 60 ball BGA (ball grid array) device will begin in the third quarter of 2003, the company said.