Intel shows off 65 nanometer memory cells

Intel has demonstrated working static RAM (SRAM) chips with transistors built using the company's 65 nanometre process technology. Microprocessors built using the technology would be ready in 2005, the company said.

Intel use SRAM chips to test out its process technology because the chips were easy to design and troubleshoot, but the transistors would be used on new versions of products such as the Pentium 4 or Xeon, an Intel senior fellow and director of the company's process architecture and integration, Mark Bohr, said.

Products built on Intel's 90 nanometre process technology are expected to make their debut in the coming weeks. For the next generation of chips built at 65 nanometres, Intel would keep the strained silicon and copper interconnects used in 90 nanometre chips, Bohr said.

Strained silicon is a manufacturing technique in which a layer of silicon germanium is deposited on top of a silicon wafer. The atoms in each substance naturally seek to align themselves, which stretches the silicon, allowing more electrons to flow than was possible with just silicon.

Intel would also use eight layers of copper interconnects and a new low-k dielectric material on the 65 nanometre chips that reduced power consumption, Bohr said.

A material's "k" value refers to its ability to compress electrical fields, and a dielectric with a lower k value increases the speed at which electrons flow through a transistor.

The costs of moving to the 65 nanometre technology would be reduced by the ability to use much of the same lithography tools used to make the 90 nanometre chips, Bohr said.

Intel would purchase some upgraded tools to help build some of the new structures, but most of the tools would remain the same, he said.

The 65 nanometre chips would be produced at Intel's facility in Hillsboro, Oregon, and rolled out to the company's other manufacturing plants over time, Bohr said.

Intel recently announced it was moving to a new high-k dielectric material as well as metal gates on its 45 nanometre process technology.

The discovery of that material came too late to include in this process technology, Bohr said.

The high-k material is necessary at the 45 nanometre level to prevent current leakage caused by the extreme thinness of the chip's structures at 45 nanometres, Intel said last month.

Join the newsletter!

Or

Sign up to gain exclusive access to email subscriptions, event invitations, competitions, giveaways, and much more.

Membership is free, and your security and privacy remain protected. View our privacy policy before signing up.

Error: Please check your email address.
Keep up with the latest tech news, reviews and previews by subscribing to the Good Gear Guide newsletter.

Tom Krazit

IDG News Service
Show Comments

Brand Post

Most Popular Reviews

Latest Articles

Resources

PCW Evaluation Team

Tom Pope

Dynabook Portégé X30L-G

Ultimately this laptop has achieved everything I would hope for in a laptop for work, while fitting that into a form factor and weight that is remarkable.

Tom Sellers

MSI P65

This smart laptop was enjoyable to use and great to work on – creating content was super simple.

Lolita Wang

MSI GT76

It really doesn’t get more “gaming laptop” than this.

Jack Jeffries

MSI GS75

As the Maserati or BMW of laptops, it would fit perfectly in the hands of a professional needing firepower under the hood, sophistication and class on the surface, and gaming prowess (sports mode if you will) in between.

Taylor Carr

MSI PS63

The MSI PS63 is an amazing laptop and I would definitely consider buying one in the future.

Christopher Low

Brother RJ-4230B

This small mobile printer is exactly what I need for invoicing and other jobs such as sending fellow tradesman details or step-by-step instructions that I can easily print off from my phone or the Web.

Featured Content

Product Launch Showcase

Don’t have an account? Sign up here

Don't have an account? Sign up now

Forgot password?